Evidence of SiOx suboxides at Ar ion etched silica surfaces

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Abstract
X‐ray photoelectron spectroscopy (XPS), Auger spectroscopy, and synchrotron radiation (SR) photoemission are used for studying composition changes induced by 1–8 keV Ar ions on silica surfaces. When recorded at normal electron emission, both XPS and Auger spectra show that SiO x phases (0<x<2) form for Ar energies higher than 2 keV. The presence of these species is also disclosed by the silicon Auger parameters. The 0/Si atomic ratio, calculated by quantitative XPS analysis, drops well below two for impact energies ≥5 keV. SR photoemission and angular dependent XPS results, obtained at depth resolutions in the range 4–10 Å, show that photoemission techniques possess a chemical capability for discriminating between SiO x suboxides and silica, which is comparable with that achievable by Auger Si L V V spectra.

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