Photoluminescence study of high quality InGaN–GaN single heterojunctions
- 29 July 1996
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 69 (5) , 668-670
- https://doi.org/10.1063/1.117800
Abstract
In this letter we report the results of room‐temperature continuous wave and pulsed photoluminescence measurements on InGaN–GaN single heterojunctions. These InGaN–GaN heterojunctions were deposited over basal plane sapphire substrates using low pressure metalorganic chemical vapor deposition. We suggest the use of vertical cavity stimulated emission instead of spontaneous emission peak position as a good measure of the InGaN band edge.Keywords
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