A new technique for liquid phase epitaxy
- 1 September 1970
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 7 (2) , 221-226
- https://doi.org/10.1016/0022-0248(70)90014-x
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Constitutional supercooling in GaAs liquid phase epitaxyJournal of Crystal Growth, 1970
- Arseniure de gallium de haute mobilite obtenu par epitaxie en phase liquideMaterials Research Bulletin, 1968
- Morphological stabilityJournal of Crystal Growth, 1968
- Solubility of III–V Compound Semiconductors in Column III LiquidsJournal of the Electrochemical Society, 1963