The Heteronucleation of and Defect Generation in MBE-Grown InAs Layers
- 1 January 1988
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Morphological Transitions in Solid Expitaxial OverlayersEurophysics Letters, 1987
- Nucleation of GaAs on Si: Experimental evidence for a three-dimensional critical transitionApplied Physics Letters, 1987
- First stages of the MBE growth of InAs on (001)GaAsJournal of Crystal Growth, 1987
- Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained-layer heterostructuresApplied Physics Letters, 1985
- Determination of nucleation and growth mechanismsThin Solid Films, 1985