High-power (1 W, CW) single-lobe operation of LPE-grown GaInAsP/GaInP (x = 0.8 μm) separate-confinement single-quantum-well broad-area lasers
- 31 August 1989
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 25 (18) , 1239-1240
- https://doi.org/10.1049/el:19890831
Abstract
Liquid-phase epitaxy was used to grow single-quantum-well separate-confinement laser structures with a GaInAsP active layer. Broad-area devices with 100μm-wide stripes that were fabricated from these structures emit over 1 W of optical power per facet at a wavelength of 0.8 μm in continuous room-temperature operation. A stable single-lobed far-field pattern with a beam divergence as low as 0.6° is obtained in pulsed operation.Keywords
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