Measuring photocarrier diffusivity near a Si(111) surface by reflective two-color transient grating scattering
- 19 June 1995
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 66 (25) , 3501-3503
- https://doi.org/10.1063/1.113777
Abstract
Photocarrier diffusion within several hundred angstroms of a Si(111) surface was studied by the transient grating technique in the reflection geometry with independently tunable pump and probe picosecond laser pulses. A monotonous decay of the diffraction signal on 10−10 s scale immediately following the carrier excitation pulse was observed and attributed to band edge carrier diffusion. The ambipolar diffusivity at photocarrier density of 2×1019 cm−3 is determined to be 4.7 cm2/s.Keywords
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