780 nm band TM-mode laser operation of GaAsP/AlGaAs tensile-strained quantum-well lasers

2 September 1993

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 29 (18) , 1611-1613
https://doi.org/10.1049/el:19931073

Abstract

Tensile-strained active layer GaAs/AlGaAs separateconfinement- heterostructure quantum-well lasers are reported. These lasers oscillate in the 780 nm band in the TM mode by TM mode gain enhancement in the tensile-strained active layer. The threshold current density of single-quantum-well laser diodes increases rapidly with heatsink temperature. However, triple-quantum-well laser diodes with a cavity length of 485–110 μm oscillated with a threshold current density 1–4 and 30 kA/cm².

Keywords

GAIN ENHANCEMENT
110 TO 485 MICRON
TENSILE-STRAINED QUANTUM-WELL LASERS
TM MODE
HEATSINK TEMPERATURE
GAASP-ALGAAS
780 NM
GAASP/ALGAAS
SEPARATE-CONFINEMENT-HETEROSTRUCTURE
TRIPLE-QUANTUM-WELL LASER DIODES
SINGLE-QUANTUM-WELL LASER DIODES
THRESHOLD CURRENT DENSITY

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