Low-distortion CMOS transconductor

24 May 1990

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 26 (11) , 720-722
https://doi.org/10.1049/el:19900470

Abstract

A new transconductor based on MOS transistors operating in saturation is proposed. Linearisation is achieved in a common-source pair by driving the devices in a purely antiphase mode. Simulation results show that the proposed transconductor would typically exhibit less than 1% THD for input signals up to 5.7 V.

Keywords

INOUT SIGNALS
MOS TRANSISTORS OPERATING IN SATURATION
5.7 V
COMMON-SOURCE PAIR
SIMULATION RESULTS
LOW DISTORTION CMOS TRANSCONDUCTOR
ANTI-PHASE MODE
THD
LINEARISATION
VCCS

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