Recent Developments on a 128 x 128 Indium Antimonide/FET Switch Hybrid Imager For Low-Background Applications

6 November 1986

proceedings article
Published by SPIE-Intl Soc Optical Eng

Vol. 686, 76-85
https://doi.org/10.1117/12.936527

Abstract

By combining high-quality mesa photovoltaic indium antimonide detector material with a silicon x-y FET switch multiplexer, a useful infrared area detector has been developed. This device is intended for low-background applications, where high sensitivity is required. Initial characterization of the detector at 80 K showed a KTC limited read noise of less than 1,000 electrons, good dark current, responsivity uniformity, and a maximum readout rate of 10 MHz. The hybrid mating technology has sufficient precision to allow expansion to a 256 x 256 format. The dark current in the detector material is sufficiently low to allow full-frame integration, even with arrays as large as 256 x 256 elements.© (1986) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.

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