SPONTANEOUS AND LASER EMISSION FROM Pb1−xSnxTe DIODES PREPARED BY Sb DIFFUSION
- 1 October 1970
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 17 (7) , 290-292
- https://doi.org/10.1063/1.1653406
Abstract
Impurity diffusion, using the donor impurity Sb, has been used to prepare high‐quality Pb1−xSnxTe (x=0.13–0.20) light‐emitting diodes. The emission of 8–14 μ spontaneous and laserlike radiation from these diodes is discussed in terms of the optical gain expected at these wavelengths.Keywords
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