Absence of 1/ f noise in m.o.s. transistors operated in saturation
- 9 September 1971
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 7 (18) , 561
- https://doi.org/10.1049/el:19710378
Abstract
Noise measurements on p channel m.o.s.f.e.t.s in the 15 Hz–50 kHz range revealed the absence of a 1/f term in the noise spectrum which may be described by the expression Req(ω) = A + B τ/1+(ωτ)2 where A, B and τ are constants. Using charge-pumping measurements, the effective density of recombination centres was found to be 2.5 × 109 cm−2 (eV)−1.Keywords
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