Method of Determining Reliability Screens for Time Dependent Dielectric Breakdown

1 April 1979

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

No. 07350791,p. 1-7
https://doi.org/10.1109/irps.1979.362863

Abstract

Time dependent dielectric breakdown on MOS LSI circuits is a function of stress voltage, temperature, device area and latent defect density. A model for time dependent dielectric breakdown as a function of these parameters has been developed. This model has been empirically verified on test structures, as well as actual memory devices. A discussion of how this model is used to determine reliability screens for time dependent dielectric breakdown is presented.

Keywords

DIELECTRIC BREAKDOWN
TEMPERATURE
ACCELERATION
DENSITY FUNCTIONAL THEORY
EQUATIONS
DIELECTRIC DEVICES
CAPACITORS
THERMAL STRESSES
THERMAL FACTORS
LARGE SCALE INTEGRATION

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