Improving organic transistor performance with Schottky contacts
- 9 February 2004
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 84 (6) , 1004-1006
- https://doi.org/10.1063/1.1645993
Abstract
Organic field-effect transistors(OFETs) with non-Ohmic contacts, e.g., pentacene with goldelectrodes, exhibit a linearly growing threshold voltage with increased film thickness due to tunnel injection [R. Schroeder et al., Appl. Phys. Lett. 83, 3201 (2003)]. In this letter, we demonstrate gold/pentacene OFETs with a low threshold voltage independent of pentacene thickness. By doping the pentacene in the contact area with FeCl 3 (iron-III-chloride), the metal-insulator-type tunneling barrier was changed to a metal-semiconductor Schottky barrier. Since the injection through a Schottky barrier depends on the potential and not on the electric field, the threshold voltage is no longer a function of the semiconductor thickness. Through selective doping of the area under the electrode, the channel remains undoped, and large on/off ratios are retained.Keywords
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