Extrinsically dissociated dislocations in simulated aluminium
- 1 September 1998
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine A
- Vol. 78 (3) , 529-532
- https://doi.org/10.1080/01418619808241920
Abstract
The dissociation of dislocations into partials bounding an extrinsic stacking fault is studied in an atomistic simulation of aluminium. An embedded-atom-type potential is employed. Of two possible extended configurations, one retains an extrinsic stacking fault in a stable array while the other converts to an array with an intrinsic stacking fault. The results are related to interaction forces among the partial dislocations in the arrays.Keywords
This publication has 3 references indexed in Scilit:
- Interatomic Potentials from First-Principles Calculations: The Force-Matching MethodEurophysics Letters, 1994
- Dislocation structures in In-doped and undoped GaAs deformed at 700-1100°CPhilosophical Magazine A, 1989
- An Absolute Determination of the Extrinsic and Intrinsic Stacking Fault Energies in Ag-In AlloysPhysica Status Solidi (b), 1966