Dependence on substrate bias of the effective mass and dingle temperature of electrons in the surface inversion layer of silicon
- 1 August 1976
- journal article
- Published by Elsevier in Surface Science
- Vol. 58 (1) , 213-216
- https://doi.org/10.1016/0039-6028(76)90140-0
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Correlation Energy and Effective Mass of Electrons in an Inversion LayerPhysical Review Letters, 1975
- Electron-electron interactions in the surface inversion layer of a semiconductorSolid State Communications, 1975
- Effective Mass andFactor of Interacting Electrons in the Surface Inversion Layer of SiliconPhysical Review Letters, 1975
- Theory of Oscillatory g Factor in an MOS Inversion Layer under Strong Magnetic FieldsJournal of the Physics Society Japan, 1974
- The g-Factors of Interacting Electrons in Silicon Inversion LayersJournal of the Physics Society Japan, 1973
- Electron-Electron Interactions Continuously Variable in the RangePhysical Review Letters, 1972
- Properties of Semiconductor Surface Inversion Layers in the Electric Quantum LimitPhysical Review B, 1967