"Second breakdown" in transistors
- 1 March 1962
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IRE Transactions on Electron Devices
- Vol. 9 (2) , 129-136
- https://doi.org/10.1109/t-ed.1962.14960
Abstract
"Second breakdown" in transistors has been characterized as an abrupt reduction in VCE, at a collector current designated by IM, when the transistor is swept through its VCEvs ICcharacteristics. A critical review of the literature concerning this phenomenon and a more complete description of its characteristics are given. It appears that "second breakdown" is a more fundamental property of the transistor than has previously been thought. Each of the mechanisms thus far considered in the literature, in particular the "pinch-in" effect and p-n-p-n action, has been examined and found inadequate. The apparent dependence of the initiation of the phenomenon on the quantity of energy absorbed, and on the ambient temperature, indicates that it may be related to some thermal mechanism. This points to the importance of examining "second breakdown" in terms of energy dissipated rather than in terms of voltage or current as has been done to date.Keywords
This publication has 6 references indexed in Scilit:
- A Categorization of the Solid-State Device Aspects of Microsystems ElectronicsProceedings of the IRE, 1960
- Transient operation of transistor with inductive loadIRE Transactions on Electron Devices, 1960
- Multiterminal P-N-P-N SwitchesProceedings of the IRE, 1958
- Germanium power switching devicesIRE Transactions on Electron Devices, 1958
- A new high current mode of transistor operationIRE Transactions on Electron Devices, 1958
- P-N-P-N Transistor SwitchesProceedings of the IRE, 1956