Comparative Investigation of CF 4 ‐ Plasma , Ar‐Plasma, and Dilute ‐ HF ‐ Dip Cleaning Methods for (Al‐Si)/n+Si Contacts

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Abstract
In situ cleaning using reactive plasmas and Ar sputtering plasmas has been compared with of (Al‐1% Si)/n+Si contacts for contact sizes ranging from (1.5 μm)2 to (3 μm)2. reactive cleaning at pressures ≳100 mtorr results in mean postalloy contact resistances of a factor of ∼2 lower than , and in more consistent contact resistance values. Ar‐sputter cleaning yields high‐resistance (>300Ω) contacts when Al‐coated surfaces are present in the cleaning discharge. Use of a clean Mo pallet to avoid redeposition of Al on contact surfaces during cleaning results in excellent pre‐alloy contact resistances for Ar‐cleaned contacts. However, such contacts degrade during alloying at 425°C and during heating cycles at ∼300°C required for post‐metalization processes such as dielectric overcoat.

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