Experimental study of microwave reflection gain of AlAs/GaAs/AlAs quantum well structures

18 January 1990

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 26 (2) , 84-85
https://doi.org/10.1049/el:19900056

Abstract

We report on microwave reflection gain measurements on single quantum well AlAs/GaAs/AlAs resonant tunnelling structures. Reflection gain against frequency measurements in the 0.050–26.5 GHz range were performed. The equivalent negative high-frequency resistance and capacitance as a function of frequency were determined for a diode of area 49 μm². The point at which the reflection gain exceeds unity (0 dB) is noted to be the onset of possible oscillations, and thus yields a negative resistance.

Keywords

NEGATIVE RESISTANCE
ALAS-GAAS-ALAS
DIODE
AREA
MICROWAVE REFLECTION GAIN MEASUREMENTS
EQUIVALENT CAPACITANCE
REFLECTION GAIN EXCEEDS UNITY
QUANTUM WELL DIODES
FUNCTION OF FREQUENCY
EQUIVALENT NEGATIVE HIGH-FREQUENCY RESISTANCE
0.05 TO 26.5 GHZ
FREQUENCY RESPONSE
ONSET OF POSSIBLE OSCILLATIONS
RESONANT TUNNELLING STRUCTURES
SHF
SINGLE QUANTUM WELL
SEMICONDUCTORS
QUANTUM WELL STRUCTURES

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