GaInAs/GaAs quantum wire laser structures with stronggaincoupling defined by reactive ion etching
- 16 March 1995
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 31 (6) , 457-458
- https://doi.org/10.1049/el:19950343
Abstract
Gain-coupled GaInAs/GaAs quantum wire lasers have been realised with wire widths down to 70 nm by low-damage dry etching. Very strong gain modulation has been achieved by etching through the active layers. The optically pumped laser structures show singlemode operation at 77 K.Keywords
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