Anomalous x-ray transmission in dislocation-free silicon after electron irradiation
- 15 February 1981
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 23 (4) , 1859-1865
- https://doi.org/10.1103/physrevb.23.1859
Abstract
Changes in the anomalous x-ray transmission intensity upon electron irradiation of dislocation-free silicon crystals have been measured. The irradiation at 20 K produced large changes in the transmission of the [220] reflection (i.e., 5%). Some annealing experiments were done. Attempts to understand the large changes suggest that some of the point defects agglomerate forming dislocation loops during irradiation.Keywords
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