Thermodynamic study of the chemical vapour transport system GaAs–HBr using a modified entrainment method
- 1 January 1977
- journal article
- research article
- Published by Royal Society of Chemistry (RSC) in Journal of the Chemical Society, Faraday Transactions 1: Physical Chemistry in Condensed Phases
- Vol. 73, 1446-1453
- https://doi.org/10.1039/f19777301446
Abstract
Gallium arsenide is an important semiconducting compound in the manufacture of opto-electronic and microwave electronic devices. The chemical vapour transport system GaAs–HBr was studied using a modified entrainment method. Thermochemical data were obtained for the principal reactions, which were shown to result in the formation of GaBr and GaBr2 vapour molecules in the temperature range 700–1400 K. There is some evidence of the presence of other gallium species in the vapour.Keywords
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