Semiconducting Amorphous Film Containing Carbon Nitrogen and Boron

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Abstract
A semiconductor amorphous film containing carbon, nitrogen, and boron was deposited on a variety of substrates through the pyrolysis, in a closed system, of a borazine derivative. Physical and physicochemical characterization revealed a carbonaceous material having an amorphous matrix similar to vitreous carbon, but denser, with embedded crystallites of boron nitride. The film is highly reflective, adherent, hard, and behaves as a narrow band semiconductor. The bandgap is susceptible to modification by chemical treatment.

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