InN thin films grown by metalorganic molecular beam epitaxy on sapphire substrates
- 6 February 2001
- journal article
- research article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 222 (4) , 701-705
- https://doi.org/10.1016/s0022-0248(00)00986-6
Abstract
No abstract availableKeywords
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- Electrical transport in p-GaN, n-InN and n-InGaNSolid-State Electronics, 1996
- Determination of the charge carrier concentration and mobility in n‐gap by Raman spectroscopyPhysica Status Solidi (b), 1983