On the determination of diffusion lengths by means of angle-lapped P-N junctions
- 1 January 1979
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 22 (1) , 113-114
- https://doi.org/10.1016/0038-1101(79)90182-5
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Analysis of the interaction of an electron beam with a solar cell—IISolid-State Electronics, 1978
- Analysis of the interaction of an electron beam with a solar cell—ISolid-State Electronics, 1978
- Determination of minority-carrier lifetime and surface recombination velocity with high spacial resolutionIEEE Transactions on Electron Devices, 1977
- Electron-Beam Excited Minority-Carrier Diffusion Profiles in SemiconductorsJournal of Applied Physics, 1972