Superior characteristics of thermal oxide layers grown on amorphous silicon films
- 27 April 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (17) , 1167-1169
- https://doi.org/10.1063/1.97951
Abstract
Thermal oxide layers grown on polycrystalline and amorphous silicon films have been analyzed and compared by using scanning electron microscope (SEM) photographs, ramp-voltage-stressed current-voltage (I-V) measurements, and constant current stress. The asperity effect observed from SEM photographs and the ramp-voltage-stressed I-V technique is found to be less serious for the thermal oxides grown on the amorphous silicon films, resulting in a smaller leakage current and a larger electron fluence endurance. These superior characteristics enable the amorphous silicon to be a good candidate for further scaled nonvolatile memory device applications.Keywords
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