Large homogeneous Pb1-xSnxTe single crystal growth by vapor-melt-solid mechanism
- 31 March 1982
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 57 (1) , 141-144
- https://doi.org/10.1016/0022-0248(82)90260-3
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Segregation in Pb1−xSnx Te during solidification by the Bridgman techniqueJournal of Materials Science, 1979
- Non-seeded growth of large single Pb1−xSnxTe crystals on a quartz surfaceJournal of Crystal Growth, 1978
- Tellurium-rich growth and laser fabrication of lead-tin-telluride (Pb1−xSnxTe: 0.06<x<0.08)Journal of Electronic Materials, 1977
- Improvements in the crystalline quality of PbxSn1−xTe crystals grown by vapor transport in a closed systemJournal of Electronic Materials, 1976
- Preparation of vapor grown lead-tin telluride for 8–14 micrometer photodiodesInfrared Physics, 1975
- Ein isothermes schmeltztropfen-verfahren zur herstellung von grossen, sehr reinen und homogenen blei-zinn-tellurd-einkristallen aus der dampfphaseJournal of Crystal Growth, 1971
- LONG-WAVELENGTH INFRARED Pb1−xSnxTe DIODE LASERSApplied Physics Letters, 1968
- VAPOR-LIQUID-SOLID MECHANISM OF SINGLE CRYSTAL GROWTHApplied Physics Letters, 1964
- A MATHEMATICAL ANALYSIS OF SOLUTE REDISTRIBUTION DURING SOLIDIFICATIONCanadian Journal of Physics, 1955