Solid-phase epitaxy of Ti-implanted LiNbO3

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Abstract
The solid-phase epitaxy of LiNbO3 following ion implantation of Ti dopant for the purpose of producing optical waveguides has been studied. Implanting 360-keV Ti at liquid nitrogen temperature produces a highly damaged region extending to a depth of about 400 nm. This essentially amorphous region can be recrystallized epitaxially by annealing in a water-saturated oxygen atmosphere at temperatures near 400 °C. though complete removal of all irradiation-induced damage requires temperatures in excess of 600 °C. The activation energy of the regrowth is 2.0 eV for implanted fluences below 3 ⊠ 1016 Ti/cm2. At higher fluences the regrowth proceeds more slowly, and Ti dopant segregates at the regrowth interface. Complete recrystallization following high-dose implantation requires annealing temperatures in excess of 800 °C.

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