Surface strains in epitaxial systems

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Abstract
The stress state of heteroepitaxial film systems is examined using a boundary integral method together with boundary conditions that allow deflections at the substrate/film interface. It is found that for geometries that deviate from planar structures significant variations in surface strain and film energy arise. These calculations explain recent important experimental results for Ge growth on Si, including observations for Ge islands on Si that show the surface lattice constant can exceed the bulk Ge value, and observations that the preferred region for growth on terraced films is not necessarily at the steps.

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