X-ray photoemission spectroscopy studies of Sn-doped indium-oxide films

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Abstract
The In and Sn 3d3/2 and 3d5/2 ESCA peaks and the oxygen 1s peak of Sn‐doped In2O3 films were compared with those for In2O3 films and In2O3, SnO, SnO2, and Sn3O4 powders. Comparison of as‐grown with sanded surfaces revealed Sn‐rich surface layers in.those films having good optical and transport properties. These experimental fins are interpreted with a schematic energy‐band model and the assumption that film darkening in Sn‐doped In2O3 films is caused by the formation and growth of an Sn3O4‐like second phase in the bulk. Suppression of these phase could be accomplished by higher substrate temperatures, which permit equilibrium conditions to be attained. Sn‐rich phases to migrate to the films surface, and the tine disproportionates to Sn2+ and Sn4+ ions.