Comparative study of Ni-silicide and Co-silicide for sub 0.25-μm technologies
- 31 January 2000
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 50 (1-4) , 103-116
- https://doi.org/10.1016/s0167-9317(99)00270-1
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Material aspects of nickel silicide for ULSI applicationsThin Solid Films, 1998
- The Influence of Capping Layer Type on Cobalt Salicide Formation in Films and Narrow LinesMRS Proceedings, 1998
- Comparison of TiSi2 , CoSi2, and NiSi for Thin‐Film Silicon‐on‐Insulator ApplicationsJournal of the Electrochemical Society, 1997
- Salicidation process using NiSi and its device applicationJournal of Applied Physics, 1997