High-performance low-temperature poly-Si TFTs for LCD

1 January 1987

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 436-439
https://doi.org/10.1109/iedm.1987.191452

Abstract

High-performance low-temperature poly-Si TFTs were developed by a 600°C process so that a glass substrate could be utilized. To achieve low threshold voltage (V TH ) and high field effect mobility (µ FE ), effective hydrogenation using a thin poly-Si gate was employed. Furthermore, active layer poly-Si deposition conditions by LPCVD were optimized. Thinning the gate poly-Si was very effective in reducing V TH by hydrogenation. Crystallinity of poly-Si after therma annealing at 600°C depended closely on the poly-Si deposition temperature and was a maximum at 550-560°C. The developed TFTs, with poly-Si deposited at 550°C and a 1000 Å gate, had a V TH of 6.2 V and µ FE of 37 cm 2 /V.s. These TFTs were successfully applied to LCDs with fully integrated drive circuits.

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