Development of thin‐film Cu(In,Ga)Se2and CdTe solar cells

Abstract
Cu(In,Ga)Se2and CdTe heterojunction solar cells grown on rigid (glass) or flexible foil substrates requirep‐type absorber layers of optimum optoelectronic properties andn‐type wide‐bandgap partner layers to form thep–n junction. Transparent conducting oxide and specific metal layers are used for front and back electrical contacts. Efficiencies of solar cells depend on various deposition methods as they control the optoelectronic properties of the layers and interfaces. Certain treatments, such as addition of Na in Cu(In,Ga)Se2and CdCl2treatment of CdTe have a direct influence on the electronic properties of the absorber layers and efficiency of solar cells. Processes for the development of superstrate and substrate solar cells are reviewed. Copyright © 2004 John Wiley & Sons, Ltd.

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