Use of accurate MOS models for optimizing resonant converter designs
- 1 January 1990
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 1564-1568 vol.2
- https://doi.org/10.1109/ias.1990.152394
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- The effects of MOSFET output capacitance in high frequency applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Modelling and simulation of power MOSFETs and power diodesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- SPICE models for power MOSFETs: an updatePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- An accurate model for power DMOSFETs including interelectrode capacitancesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002