COMPARATIVE STUDY OF THE STRUCTURE OF AMORPHOUS Ge AND AMORPHOUS III-V COMPOUNDS

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Abstract
The structure of evaporated amorphous Ge and flash-evaporated amorphous GaAs films, both as-deposited and annealed, is investigated by careful electron diffraction experiments. Both the interference functions and the radial distribution functions are compared to the predictions of two unrelaxed and relaxed continuous random network models with and without odd-membered rings. It is confirmed that amorphous tetracoordinated compounds must contain a negligible proportion of odd-membered rings

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