Surface preparation of single crystal n-type GaAs substrates studied by the channeling technique
- 16 May 1971
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 5 (2) , K83-K86
- https://doi.org/10.1002/pssa.2210050229
Abstract
No abstract availableThis publication has 1 reference indexed in Scilit:
- ION IMPLANTATION OF SILICON: I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MeV HELIUM ION SCATTERINGCanadian Journal of Physics, 1967