Monolithic integration of In 0.2 Ga 0.8 Asvertical-cavity surface-emitting lasers with resonance-enhanced quantum well photodetectors
- 20 June 1996
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 32 (13) , 1205-1207
- https://doi.org/10.1049/el:19960782
Abstract
Vertical-cavity surface-emitting lasers (VCSELs) have been monolithically integrated with resonance-enhanced photo-detectors (REPDs) using a single epilayer design, to produce a simple array of sources and detectors for optical interconnect applications. The detectors, which contain a three quantum well InGaAs absorption region, achieve quantum efficiencies as high as 85%, and the VCSELs achieved threshold current densities as low as 850 A/cm2 and differential quantum efficiencies as high as 50%.Keywords
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