An Analysis of Semiconductor P-N Junctions
- 1 May 1982
- journal article
- research article
- Published by Oxford University Press (OUP) in IMA Journal of Applied Mathematics
- Vol. 28 (3) , 301-318
- https://doi.org/10.1093/imamat/28.3.301
Abstract
The equations governing the flow of electric charge in semiconductor devices are introduced. The method of matched asymptotic expansions is then used to study the problem in the limit of a large ratio between impurity concentration and intrinsic carrier concentration. A simple diode is studied under the influence of current flow and uniform extemal radiation. The resulting solutions reproduce the classical results revealing additional detail about the structure and introduce new results concerning “high levels” of external radiation.Keywords
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