Defect assisted intrinsic luminescence in Al₂O₃crystals

1 November 1991

journal article
research article
Published by Taylor & Francis in Radiation Effects and Defects in Solids

Vol. 119-121 (2) , 963-968
https://doi.org/10.1080/10420159108220850

Abstract

The origin of the luminescence bands at 7.5 eV anv 3.8 eV appearing additionaly to the luminescence of F- and F⁺- centres in pure Al₂O₃ are investigated. The time - resolved luminescence spectra, absorption and luminescence excitation spectra as well as trap spectroscopy data depending on deviation from the stochiometry of crystals are discussed in terms of self - trapping of excitons in two configurations. The role of defects due to annihilation of excitons is considered.

Keywords

This publication has 4 references indexed in Scilit:

Kinetics of non-steady state diffusion-controlled tunnelling recombination of defects in insulating crystals
Journal of Physics: Condensed Matter, 1989
Optical properties of the $F^{+}$ center in crystalline ${Al}_{2}$ $O_{3}$
Physical Review B, 1978
On the vacuum ultraviolet transparency of sapphire
Physica Status Solidi (a), 1978
Sapphire luminescence under X-ray excitation
Solid State Communications, 1968

Defect assisted intrinsic luminescence in Al2O3crystals

Abstract

Keywords

Defect assisted intrinsic luminescence in Al₂O₃crystals