Experimental and Theoretical Study of Alpha Particle Induced Charge Collection in GaAs FETS
- 1 January 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 34 (6) , 1326-1331
- https://doi.org/10.1109/TNS.1987.4337474
Abstract
An experimental angular dependence study was made of charge collection in state-of-the-art GaAs FETs. Numerical simulations of the transport of electrons in the active channel and in the semi-insulating substrate were also carried out. It is concluded that charge collected by funneling from the substrate is not significant. Both energy loss in the source and drain metallizations and degradation of the potential funneling profile at larger angles of incidence may also play major roles in the charge collection efficiency of the gate.Keywords
This publication has 9 references indexed in Scilit:
- Application of LBI techniques to the solution of the transient, multidimensional semiconductor equationsJournal of Computational Physics, 1987
- Effects of a buried p-layer on alpha-particle immunity of MESFET's fabricated on semi-insulating GaAs substratesIEEE Electron Device Letters, 1986
- A mechanism for radiation-induced degradation in GaAs field-effect transistorsJournal of Applied Physics, 1985
- Numerical simulation of hot-electron effects on source-drain burnout characteristics of GaAs power FETsSolid-State Electronics, 1984
- Charge Collection in Ga/Aa Test StructuresIEEE Transactions on Nuclear Science, 1984
- Degradation in GaAs FETs Resulting from Alpha Particle IrradiationIEEE Transactions on Nuclear Science, 1984
- Charge Collection Measurements on GaAs Devices Fabricated on Semi-Insulating SubstratesIEEE Transactions on Nuclear Science, 1984
- Semiconducting and other major properties of gallium arsenideJournal of Applied Physics, 1982
- A field-funneling effect on the collection of alpha-particle-generated carriers in silicon devicesIEEE Electron Device Letters, 1981