LPCVD of Borophosphosilicate Glass from Organic Reactants

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Abstract
Borophosphosilicate glass films have been deposited in an LPCVD reactor using organic compounds as reactants. The silicon containing reactant is tetraethoxysilane (TEOS), the boron reactant is trimethylborate (TMB) and the phosphorus reactant is trimethylphosphite (TMP). A process is described that produces uniform films of boron concentration between 1 and 4 weight percent (w/o) and phosphorus concentration between 2 and 5 w/o. The films have nearly conformal step coverage and flow at temperatures as low as 850°C. The films show minor thickness changes after annealing in air or argon and are not detectably degraded by moisture. The properties of the material and the dependence of film composition on reactant flow rates and temperature are presented. The dependence of the index of refraction on phosphorus concentration and the dependence of viscous flow on the boron and phosphorus concentration is detailed. A discussion of the conditions for formation of two observed microstructural defects is presented.

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