Growth of diamond thin films by ECR plasma-assisted CVD at low pressures and temperatures
- 1 August 1993
- journal article
- Published by Elsevier in Diamond and Related Materials
- Vol. 2 (10) , 1355-1359
- https://doi.org/10.1016/0925-9635(93)90184-4
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Diamond thin film growth on silicon at temperatures between 500 and 600 °C using an electron cyclotron resonance microwave plasma sourceSurface and Coatings Technology, 1991
- Effects of Oxygen Addition on Diamond Film Growth by Electron-Cyclotron-Resonance Microwave Plasma CVD ApparatusJapanese Journal of Applied Physics, 1991
- Low-Temperature Synthesis of Diamond Films Using Magneto-Microwave Plasma CVDJapanese Journal of Applied Physics, 1990
- Large Area Chemical Vapour Deposition of Diamond Particles and Films Using Magneto-Microwave PlasmaJapanese Journal of Applied Physics, 1987