Plasma-enhanced chemical vapor deposition and structural characterization of amorphous chalcogenide films
- 1 August 1998
- journal article
- Published by Pleiades Publishing Ltd in Semiconductors
- Vol. 32 (8) , 855-860
- https://doi.org/10.1134/1.1187472
Abstract
We describe the preparation of layers of amorphous Se, AsxS1−x, AsxSe1−x, GexS1−x, and GexSe1−x by plasma-enhanced chemical vapor deposition using the hydrides of the elements as precursor gases. We discuss the influence of the gas ratios and the deposition conditions (pressure, rf power input) on the chemical composition and the homogeneity of the binary systems. Information concerning the structure of the films was obtained from infrared and Raman spectroscopy.Keywords
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