Epitaxial Growth of Wide-Gap Chalcopyrite Materials –Current State and Future–

1 January 1993

journal article
Published by IOP Publishing in Japanese Journal of Applied Physics

Vol. 32 (S3)
https://doi.org/10.7567/jjaps.32s3.10

Abstract

The world-wide current state of the epitaxial growth of wide-gap chalcopyrite materials, especially of I-III-VI₂ (I=Cu, Ag; III=Al, Ga; VI=S, Se), is reviewed with emphasis on outstanding progress and problems. An optimistic view of the future development directed toward device applications, which includes conductivity control and heteroepitaxial growth, is also presented.

Keywords

CRYSTAL GROWTH
EPITAXY
HETEROSTRUCTURE

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