Shallow p + layers in In 0.53 Ga 0.47 As by Hg implantation
- 31 January 1985
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 21 (3) , 122-124
- https://doi.org/10.1049/el:19850085
Abstract
We demonstrate for the first time a shallow p+−n homojunction fabricated on In0.53Ga0.47As by mercury ion implantation. Implanted mercury behaves as an acceptor in In0.53Ga0.47As and does not diffuse towards the bulk. Mercury implantation can be a good technique in realising a shallow p+−n junction in GaInAs.Keywords
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