Intersubband Raman Laser
- 30 May 2001
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 78 (23) , 3580-3582
- https://doi.org/10.1063/1.1377857
Abstract
An intersubband Raman laser has been realized in an artificial GaAs/AlGaAs three-level quantum-well structure. A laser in resonance with the one-to-three level transition is used as the pump, while the lasing emission occurs via the three-to-two level transition. The one-to-two level spacing is designed to be in resonance with the AlAs-like longitudinal optical phonon mode, favoring the Raman process. This work presents an alternative mechanism for realizing intersubband lasers and opens up new possibilities in reaching the far infrared region and achieving room-temperature operation.
Keywords
This publication has 24 references indexed in Scilit:
- Phonon mediated lifetimes in intersubband terahertz lasersJournal of Applied Physics, 2000
- The optimization of optical gain in the intersubband quantum well laserJournal of Applied Physics, 2000
- Response to “Comment on ‘Energy level schemes for far-infrared quantum well lasers’ ” [Appl. Phys. Lett. 74, 2555 (1999)]Applied Physics Letters, 1999
- Comment on “Energy level schemes for far-infrared quantum well lasers” [Appl. Phys. Lett. 73, 300 (1998)]Applied Physics Letters, 1999
- Design and simulation of low-threshold antimonide intersubband lasersApplied Physics Letters, 1998
- Energy level schemes for far-infrared quantum well lasersApplied Physics Letters, 1998
- Simulation of optically pumped mid-infrared intersubband semiconductor laser structuresJournal of Applied Physics, 1996
- Comparative analysis of optically pumped intersubband lasers and intersubband Raman oscillatorsJournal of Applied Physics, 1995
- Negative submillimeter absorption in tunnel-coupled quantum wells under resonant infrared excitationApplied Physics Letters, 1995
- Quantum Cascade LaserScience, 1994