Self-limiting mechanism in the atomic layer epitaxy of GaAs
- 16 June 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (24) , 1681-1683
- https://doi.org/10.1063/1.96804
Abstract
A self-limiting mechanism has been observed in the atomic layer epitaxy (ALE) of GaAs deposited by alternate exposure to AsH3 and trimethylgallium (TMG). The thickness of the deposited film was found to be independent of the mole fractions of both TMG and AsH3 in the gas phase. These results will allow the use of ALE to deposit III-V compounds with growth rates which are insensitive to the input partial pressures of the reactive gases.Keywords
This publication has 6 references indexed in Scilit:
- Atomic layer epitaxy of III-V binary compoundsApplied Physics Letters, 1985
- Molecular Layer EpitaxyJournal of the Electrochemical Society, 1985
- Atomic layer epitaxy and characterization of CdTe films grown on CdTe (110) substratesJournal of Applied Physics, 1983
- A study of the growth mechanism of epitaxial GaAs as grown by the technique of metal organic vapour phase epitaxyJournal of Crystal Growth, 1981
- Interaction kinetics of As4 and Ga on {100} GaAs surfaces using a modulated molecular beam techniqueSurface Science, 1975
- Interaction of Ga and As2 Molecular Beams with GaAs SurfacesJournal of Applied Physics, 1968