Violet and blue emitting (In,Ga)N/GaN multiple quantum wells grown on γ-LiAlO2(100) by radio frequency plasma-assisted molecular beam epitaxy

We study the growth of GaN and (In,Ga)N/GaN multiple quantum wells on $\mathrm{\gamma -}{\mathrm{LiAlO}}_{\mathrm{2}}$ by rf plasma-assisted molecular beam epitaxy. The GaN layers exhibit promising optical and electrical properties, whereas the structural quality is significantly influenced by inferior substrate morphology. The (In,Ga)N/GaN multiple quantum well structures show intense room-temperature photoluminescence in the violet and blue spectral range.