Effect of Hydrogen implantation on polysilicon p-n junctions
- 1 February 1986
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 33 (2) , 270-274
- https://doi.org/10.1109/T-ED.1986.22477
Abstract
The effect of hydrogen implantation on theI(V)characteristics of lateral polysilicon p-n junctions is reported. After implantation with hydrogen and annealing at 400°C, a moderate decrease in the forward current and a large decrease in the reverse current is observed. In addition, the reverse breakdown voltage is increased. Best results were obtained for hydrogen dose of 1016cm-2. The measurements are explained by considering both electric field enhancement of emission and capture rates and the generation of new trap levels by ion implantation.Keywords
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