Magnetowiderstand und Bandverschiebungen an halbleitenden Wismut-Antimon-Legierungen unter hohem hydrostatischem Druck / Magnetoresistance and Band Shifts in Semiconducting Bismuth-Antimony Alloys under High Hydrostatic Pressure

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Abstract
Magnetoresistance The magnetoresistance of semiconducting Bi100-xSbx single crystals (x = 5.5 and 6.3 at % Sb) at T = 297, 77 and 63 K was measured in magnetic fields up to B = 15 T. In this region, the dependence of the magnetoresistance on the magnetic field strength exhibits a negative slope, which is characteristic for semiconductor-semimetal or semiconductor-quasimetal transitions, as previously observed by other authors in Bi-Sb alloys in the liquide He-temperature range. The influence of hydrostatic pressure (p ≦ 15 kbar) on the extrema of magnetoresistance oscillations at T = 77 and 63 K arising from the Shubnikov-de Haas effect has been examined. The results confirm the concept of approaching and mutually repelling L-point conductivity and valence bands. For the samples investigated, the energy gaps [Eg(x = 5.5) =6.94 meV and Eg(x = 6.3) = 7.64 meV] show pressure dependences of dE/dp= -1.16 · 10-6 eV/bar at 77 K and -1.39 · 10 -6 eV/bar at 63 K, respectively. Preparation of the samples, their characterization in terms of chemical microanalysis and dislocation densities as well as the method of applying high hydrostatic pressure are described in detail.

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