THE EPITAXY OF COPPER ON SAPPHIRE
- 1 March 1968
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 12 (5) , 161-163
- https://doi.org/10.1063/1.1651935
Abstract
Epitaxial twinned single‐crystal films of copper have been grown on sapphire substrates by high vacuum evaporation in the temperature range 240–‐375°C. The presence of a twin relationship in copper deposited on the basal plane of sapphire was demonstrated and evaluated by x‐ray diffraction techniques. The epitaxy has been shown to be (111)Cu ∥ (0001)α−Al2O3; [21̄1̄)Cu ∥ [21̄1̄0]α−Al2O3. The films have been found to exhibit the bulk metal resistivity.Keywords
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